Electrostatic discharge (ESD) is a major threat to the reliability of modern electronic systems, particularly integrated circuits and microelectronic components. ESD events, though often imperceptible to humans, can cause immediate or latent damage to sensitive semiconductor structures, leading to performance degradation or failure. Industry data identifies ESD as the leading cause of microchip failure, with many ICs vulnerable to damage at voltages as low as 2,000 V—well below the 3,000 V threshold at which humans can feel a discharge. The IEC 61000-4-2 standard defines the Human Body Model (HBM) and other test models (MM, CDM) to simulate real-world ESD events, with typical discharges reaching 15 kV (up to 25 kV in extended testing), characterized by rapid rise times (1 ns) and short durations (100 ns). These transients place significant stress on I/O pins and power lines, especially in high-density, low-voltage devices. ESD arises from triboelectric charging during common activities like walking on synthetic carpets or handling plastic packaging, with risk increasing in low-humidity environments. Prevention requires a multi-layered strategy: design-level protection using clamping diodes, TVS devices, and proper PCB layout; use of anti-static packaging and grounded workstations; and adherence to standards such as GB/T 17626.2-2018 and IEC 61000-4-2. Distinguishing ESD from Electrical Overstress (EOS) is critical for accurate failure analysis. As semiconductor technologies advance, with gate oxides below 10 nm, ESD sensitivity increases, necessitating continuous improvement in protection methods and testing protocols. Effective ESD mitigation spans the entire product lifecycle and is essential for ensuring long-term system reliability.